Appendix A Electrical Characteristics
MC9S12XDP512 Data Sheet, Rev. 2.11
Freescale Semiconductor 963
Table A-30. Example 2b: Emulation Expanded Mode Timing V
DD35
= 5.0 V (EWAITE = 0)
No. C Characteristic
1
1
Typical supply and silicon, room temperature only
Symbol
1 Stretch
Cycle
2 Stretch
Cycles
3 Stretch
Cycles
Unit
Min Max Min Max Min Max
— — Internal cycle time t
cyc
25 25 25 25 25 25 ns
1 — Cycle time t
cyce
50 ∞ 75 ∞ 100 ∞ ns
2 D Pulse width, E high PW
EH
11.5 14 11.5 14 11.5 14 ns
3 D E falling to sampling E rising t
EFSR
35 39.5 60 64.5 85 89.5 ns
4 D Address delay time t
AD
—5—5—5ns
5 D Address hold time t
AH
0—0—0—ns
6 D IVD delay time
2
2
Includes also ACCx, IQSTATx
t
IVDD
— 4.5 — 4.5 — 4.5 ns
7 D IVD hold time
2
t
IVDH
0—0—0—ns
8 D Read data setup time t
DSR
12 — 12 — 12 — ns
9 D Read data hold time t
DHR
0—0—0—ns
10 D Write data delay time t
DDW
—5—5—5ns
11 D Write data hold time t
DHW
0—0—0—ns
12 D Read/write data delay time
3
3
Includes LSTRB
t
RWD
–1 5 –1 5 –1 5 ns