Appendix A Electrical Characteristics
MC9S12XDP512 Data Sheet, Rev. 2.11
940 Freescale Semiconductor
Table A-17. NVM Timing Characteristics
Conditions are shown in Table A-4 unless otherwise noted
Num C Rating Symbol Min Typ Max Unit
1 D External oscillator clock f
NVMOSC
0.5 — 80
1
1
Restrictions for oscillator in crystal mode apply.
MHz
2 D Bus frequency for programming or erase operations f
NVMBUS
1 — — MHz
3 D Operating frequency f
NVMOP
150 — 200 kHz
4 P Single word programming time t
swpgm
46
2
2
Minimum programming times are achieved under maximum NVM operating frequency f
NVMOP
and maximum bus frequency
f
bus
.
— 74.5
3
3
Maximum erase and programming times are achieved under particular combinations of f
NVMOP
and bus frequency f
bus
. Refer
to formulae in Sections Section A.3.1.1, “Single Word Programming” – Section A.3.1.4, “Mass Erase” for guidance.
µs
5 D Flash burst programming consecutive word
4
4
Burst programming operations are not applicable to EEPROM
t
bwpgm
20.4
2
—31
3
µs
6 D Flash burst programming time for 64 words
4
t
brpgm
1331.2
2
— 2027.5
3
µs
7 P Sector erase time t
era
20
5
5
Minimum erase times are achieved under maximum NVM operating frequency, f
NVMOP
.
— 26.7
3
ms
8 P Mass erase time t
mass
100
5
— 133
3
ms
9 D Blank check time Flash per block t
check
11
6
6
Minimum time, if first word in the array is not blank
— 65546
7
7
Maximum time to complete check on an erased block
t
cyc
10 D Blank check time EEPROM per block t
check
11
6
— 2058
7
t
cyc