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1.1.1
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1. SPECIFICATIONS AND INSTALLATION REQUIREMENTS
1.1 Specifications
1.1.1 Resolution
Secondary electron image resolution: 3.0 nm (30 kV acceleration voltage, in high vacuum
mode)
10 nm (3 kV acceleration voltage, in high vacuum
mode)
Backscattered electron image resolution: 4.0 nm (30 kV acceleration voltage, in low vacuum
mode)
1.1.2 Magnification
5x to 300,000x
(Highest and lowest magnifications are dependent upon accelerating voltage, WD and scan
speed.)
1.1.3 Electron Optical System
Electron source: Pre-centered cartridge type tungsten
hairpin filament
Acceleration voltage: 0.3 kV to 30 kV
Gun bias: Quad-/self-bias switching and continuously variable fixed bias
Beam alignment: Electromagnetic two-stage deflection (doubles as blanking when the
image is frozen)
Lens system: Three-stage electromagnetic lens reduction optical system
Stigma correcting unit: Electromagnetic 8-pole XY method
Scanning coil: Two-stage electromagnetic deflection method
Movable objective aperture: Four-hole movable aperture (30, 50, 80, and 150 µm)
Image shift: ± 50 µm or greater (WD = 10 mm)
X-ray analysis position: WD =10 mm, X-ray take-out angle (TOA) = 35°
Detector and image types: Secondary electron detector; secondary electron image (high
vacuum mode)
Quad-type semiconductor backscattered electron detector;
backscattered electron image (High/low vacuum mode)