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2316E
16K (2K
)(
8)
ROM
• Fast Access
Time-450
ns
Max.
• Single
+5V.:!:.
10% Power Supply
• Intel MCS
80
and
85
Compatible
•
Three Programmable Chip
Selects for Simple Memory
Expansion and
Sy·stem
Interface
• EPROM/ROM
Pin
Compatible for
Cost-Effective System
Development
• Completly
Static Operation
• Inputs and Outputs TTL
Compatible
•
Three-State Output for Direct
Bus
Interface
The
Intel® 2316E
is
a 16,384-bit static,
N-channel
MaS
read
only memory (ROM) organized
as
2048 words by 8 bits. Its
high
bit
density
is
ideal
for
large,
non-volatile data
storage
applications
such
as
program
storage.
The three-state outputs
and
TTL
input/output
levels
allow for direct interface with common
system
bus
structures.
The
2316E
single
+5V power supply
and
450
ns
access
time
are
both
ideal
for
usage
with high performance microcomputers
such
as
the Intel
MCSTM-80
and
MCSTM-85
devices.
A cost-effective system development program may be implemented by using the pin compatible Intel 2716 16K
UV
EPROM
for
prototyping and the lower cost 2616
PROM
and 2316E
ROM
for
production. The three 2316E programmable
chip
selects may be defined by the user and are fixed during the masking process. To
simplify
the conversion from
2716 prototyping
to
2316E production, it is recommended that the 2316E programmable chip select logic levels be
defined the same as that shown in the
below data sheet pin configuration. This pin configuration and these chip select
logic levels
are the same as the
2716.
PIN CONFIGURATION
BLOCK DIAGRAM
A,
Vee
As
A8
AS
A.
A,
•
..
es,
A3
CSl
Ag
A,
AlO
A8
A,
CS2
A,
A.
0,
D.
Os
AS
0,
Os
A,
0,
04
..
03
A,
PIN NAMES
A,
A,
A.
8-5
AFN-00684A-Gl