inter
2114A
1024 X 4 BIT STATIC
RAM
2114AL-1
2114AL-2 2114AL-3 2114AL-4
2114A-4 2114A-5
I Max. Access Time (ns) 100
120
150 200 200 250
I Max. Current (mA)
40
40
40 40
70
70
•
HMOS Technology
•
Completely Static Memory - No Clock
•
Low Power, High Speed
or
Timing Strobe Required
•
Directly TTL Compatible: All Inputs
•
Identical Cycle and Access Times
and
Outputs
Single
+5V
Supply
±10%
•
Common Data Input and Output Using
• Three-State Outputs
•
High Density
18
Pin Package
•
2114
Upgrade
The
Intele>
2114A is a 4096-bit static Random Access Memory organized
as
1024 words by 4-bits using HMOS, a high per-
formance MOS technology. It uses fully DC stable (static) circuitry throughout, in both the array and the decoding, therefore
it
.
requires no
clocks
or
refreshing to operate. Data access is particularly simple since address setup times are not required. The
data is read out non
destructively and has the same polarity
as
the input data. Common input/output pins are provided.
The 2114A is designed for memory
applications where the high performance and high reliability
of
HMOS, low cost, large bit
storage, and
simple interfacing are important design objectives. The
2ll4A
is
placed in
an
la-pin
package
for
the highest
possible density.
It
is
directly TTL compatible in all respects: inputs, outputs, and a single
+5V
supply. A separate Chip Select (CS) lead allows
easy selection of
an
individual package when outputs are or-tied.
PIN
CONFIGURATION LOGIC SYMBOL
BLOCK DIAGRAM
®
~
Ao
vee
A,
Vee
Ao
A ®
-ill-GND
II,;
,
A,
A,
1/°1
®
A,
As
ROW
MEMORY
ARRAY
Ao
(i')
SELECT
64
ROWS
A,
As
'-'
64
COLUMNS
Ao
110,
@
A,
A,
Ao
1/°
1
@
As
A,
A,
110,
A.
1/°3
IIO,@
A,
1/°3
A,
1/°
4
A,
1/°4
IIO,@
WE
A.
110,@
WE
es
PIN NAMES
AO-Ag
ADDRESS INPUTS
Vee
POWER
1+5VI
o = PIN NUMBERS
WE
WRITE ENABLE GND GROUND
C!
CHIP SELECT
1/0
1
-1/0
4
OATA
INPUT/OUTPUT
INTEL
CORPORATION
ASSUMES
NO
RESPONSIBILITY
FOR
THE
USE
OF
ANY
CIRCUITRY
OTHER
THAN
CIRCUITRY
EMBODIED
IN
AN
INTEL
PRODUCT.
NO
OTHER
CIRCUIT
PATENT
LICENSES
ARE
IMPLIED.
·.INTEL
CORPORATION,
1977.
1979
DECEMBER.
1979
8-1